HYDROGEN EMBRITTLEMENT: A NEW MODEL FOR THE MECHANISM OF REDUCTION OF METALLIC COHESION = FRAGILITE D'HYDROGENE: UN NOUVEAU MODELE POUR LE MECANISME DE LA REDUCTION DE LA COHESION METALLIQUELOSCH W.1979; SCR. METALL.; ISSN 0036-9748; USA; DA. 1979; VOL. 13; NO 8; PP. 661-664; BIBL. 19 REF.Article

PROBLEME DER SCHALL DAEMPFUNG BEI VERBRENNUNGSPROZESSEN = LES PROBLEMES DE L'ISOLATION PHONIQUE DANS LES PROCESSUS DE COMBUSTIONLOSCH W.1973; V.D.I. BER.; DTSCH.; DA. 1973; NO 211; PP. 113-117; ABS. ANGL. FR; (VERBRENNUNG FEUERUNGEN. V.D.I.-TAG. VORTR.; ESSEN; 1973)Conference Paper

TEMPER EMBRITTLEMENT AND SURFACE SEGREGATION, AN AES AND ILS STUDYLOSCH W.1979; ACTA METALLURG.; USA; DA. 1979; VOL. 27; NO 4; PP. 567-573; ABS. FRE/GER; BIBL. 28 REF.Article

COMPARISON OF AUGER ELECTRON SPECTROSCOPY, AUGER ELECTRON APPEARANCE-POTENTIAL SPECTROSCOPY, AND DISAPPEARANCE-POTENTIAL SPECTROSCOPY IN A CYLINDRICAL-MIRROR-ANALYZER SYSTEM.KIRSCHNER J; LOSCH W.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 5; PP. 1173-1179; BIBL. 17 REF.Article

GRAIN BOUNDARY SURFACE PHASES OBSERVED IN TEMPER EMBRITTLED HIGH-ALLOY STEELS.LOSCH W; ANDREONI I.1978; SCRIPTA METALLURG.; E.U.; DA. 1978; VOL. 12; NO 3; PP. 277-281; BIBL. 17 REF.Article

DIE TEMPERATURANOMALIE AN DER OBERFLAECHE EINES HALBRAUMS MIT EINGELAGERTEM ZYLINDRISCHEM UND KUGELFORMIGEM STORKORPER. = DISTRIBUTION DES TEMPERATURES A LA SURFACE D'UN DEMI-ESPACE COMPORTANT DES ANOMALIES CYLINDRIQUES ET SPHERIQUESROSSLER R; LOSCH W.1977; ACTA GEOD. GEOPHYS. MONTANIST. ACAD. SCI. HUNGAR.; HONGR.; DA. 1977; VOL. 12; NO 4; PP. 437-450; ABS. RUSSE; BIBL. 8 REF.Article

"WHEN ARE FREE SURFACE AND GRAIN BOUNDARY SEGREGATION EQUIVALENT. = QUAND LA SEGREGATION EN SURFACE ET AUX JOINTS DE GRAINS SONT-ELLES EQUIVALENTES.LOSCH W; ROUSSELET J.1980; SCR. METALL.; ISSN 0036-9748; USA; DA. 1980; VOL. 14; NO 2; PP. 195-197; BIBL. 8 REF.Article

AN AES STUDY OF A COPPER-ION SULPHIDE MINERAL.LOSCH W; MONHEMIUS AJ.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 60; NO 1; PP. 196-210; BIBL. 8 REF.; 10 ILL.Article

A model of low temperature silicon compound material growth kineticsLOSCH, W.Thin solid films. 1992, Vol 216, Num 2, pp 225-229, issn 0040-6090Article

ESD ON METAL OXIDES AND OXYGEN ADSORPTION LAYERS: EVIDENCE FOR DIFFERENT MECHANISMS IN ELECTRON STIMULATED DESORPTIONNIEHUS H; LOSCH W.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 111; NO 2; PP. 344-350; BIBL. 18 REF.Article

SURFACE COMPOSITION OF POLYCRYSTALLINE AU-CU ALLOYS AS A FUNCTION OF TEMPERATURELOSCH W; KIRSCHNER J.1978; J. VACUUM SCI. TECHNOL.; USA; DA. 1978; VOL. 15; NO 4; PP. 1541-1548; BIBL. 38 REF.Article

COMPOSITION AND TEMPERATURE COEFFICIENT OF RESISTANCE OF NI-CR THIN FILMS = COMPOSITION ET COEFFICIENT EN TEMPERATURE DE LA RESISTANCE DE COUCHES MINCES DE NI-CRDHERE NG; VAIUDE DG; LOSCH W et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 1; PP. 33-41; BIBL. 22 REF.Article

ELECTRON-BEAM-INDUCED DIFFUSION DURING THIN-FILM DEPTH PROFILING = DIFFUSION INDUITE PAR FAISCEAU D'ELECTRONS AU COURS DU PROFILAGE EN PROFONDEUR DE COUCHES MINCESROLL K; LOSCH W; ACHETE C et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4422-4424; BIBL. 7 REF.Article

A SIMPLIFIED MODEL OF IMPURITY INDUCED TEMPER EMBRITTLEMENTANDA E; LOSCH W; MAJLIS N et al.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 611-614; ABS. FRE/GER; BIBL. 11 REF.Article

A SIMPLIFIED MODEL OF IMPURITY INDUCED TEMPER EMBRITTLEMENTANDA E; MAJLIS N; URE JE et al.1982; ACTA METALL.; USA; DA. 1982-02; VOL. 30; NO 2; PP. 611-614; BIBL. 11 REF.Article

Grain boundary reactive diffusion in Ni₂Si thin filmsLOSCH, W; ACCHAR, W.Physica status solidi. A. Applied research. 1999, Vol 173, Num 1, pp 275-279, issn 0031-8965Conference Paper

Grain boundary diffusion and grain boundary structure in nanocrystalline thin filmsLOSCH, W; JARDIM, P. M.Scripta materialia. 1998, Vol 38, Num 12, pp 1857-1861, issn 1359-6462Article

Application of factor analysis to Auger crater-edge profilingGATTS, C; LOSCH, W.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 6, pp 2982-2985, issn 0734-2101Article

Concerning the mass transport mechanisms for sulfur and antimony segregation to external free surfaces in Ni-1 wt % Sb = Au sujet des mécanismes de transport de masse pour la ségrégation du soufre et de l'antimoine aux surfaces externes libres dans Ni-1% poids SbWHITE, C. L; LOSCH, W.Scripta metallurgica. 1985, Vol 19, Num 5, pp 665-668, issn 0036-9748Article

DIE ANWENDUNG VON GEOELEKTRISCHEN MESSSYSTEMEN MIT VERSENKTEN ELEKTRODEN ZUR ORTUNG VON HOHLRAEUMEN = EMPLOI DE MOYENS GEOELECTRIQUES DE MESURE, AVEC ELECTRODES ENTERREES POUR LOCALISATION DES CAVITES SOUTERRAINESBRIEDEN HJ; LOSCH W; MILITZER H et al.1978; NEUE BERGBAUTECH.; DDR; DA. 1978; VOL. 8; NO 4; PP. 191-197; BIBL. 5 REF.; 13 ILL.Article

Grain boundary reactive diffusion during Ni₂Si formation in thin films and its dependence on the grain boundary angleJARDIM, P. M; ACCHAR, W; LOSCH, W et al.Applied surface science. 1999, Vol 137, Num 1-4, pp 163-169, issn 0169-4332Article

Au/Si interface : experiments on substrate influencePASA, A. A; PAES, H. JR; LOSCH, W et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 2, pp 374-380, issn 0734-2101Article

Silicide formation of thin vanadium layers in ultrahigh vacccum studied by ion scattering, Auger electron spectroscopy, low energy electron diffraction, and secondary ion mass spectrometryACHETE, C; NIEHUS, H; LOSCH, W et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 5, pp 1327-1331, issn 0734-211XArticle

A new model for the interaction mechanism at the gold-silicon interfaceLOSCH, W.Sensors and actuators. A, Physical. 1992, Vol 33, Num 1-2, pp 97-98, issn 0924-4247Conference Paper

Two-dimensional growth of Si grains inside Au thin filmsPASA, A. A; LOSCH, W; BAUER, G. H et al.Physica status solidi. B. Basic research. 1995, Vol 192, Num 2, pp 527-533, issn 0370-1972Conference Paper